VEMD11940FX01 www.vishay.com vishay semiconductors rev. 1.0, 09-jan-14 1 document number: 84194 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon pin photodiode description VEMD11940FX01 is a high speed and high sensitive pin photodiode in a miniature si de looking, surface mount package (smd) with daylight bloc king filter. filter is matched with ir emitters operating at wavelength of 830 nm to 950 nm. the photo sensitive area of the chip is 0.053 mm 2 . features ? package type: surface mount ? package form: side view ? dimensions (l x w x h in mm): 3 x 2 x 0.6 ? aec-q101 qualified ? high radiant sensitivity ? daylight blocking filter matched with 830 nm to 950 nm ir emitters ? angle of half sensitivity: ? = 75 ? package matched with ir emitter vsmb11940x01 ? floor life: 168 h, msl 3, according to j-std-020 ? lead (pb)-free re flow soldering ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? high speed photo detector ? infrared remote control ? infrared data transmission ? photo interrupters ? ir touch panels note ? test conditions see table basic characteristics note ? moq: minimum order quantity product summary component i ra (a) ? (deg) 0.5 (nm) VEMD11940FX01 1.13 75 780 to 1050 ordering information ordering code packaging remarks package form VEMD11940FX01 tape and reel moq: 4000 pcs, 4000 pcs/reel side view absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 60 v power dissi pation t amb 25 c p v 104 mw junction temperature t j 100 c operating temperature range t amb -40 to +100 c storage temperature range t stg -40 to +100 c soldering temperature acc. reflow solder profile fig. 8 t sd 260 c thermal resistance juncti on/ambient acc. j-std-051 r thja 580 k/w
VEMD11940FX01 www.vishay.com vishay semiconductors rev. 1.0, 09-jan-14 2 document number: 84194 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature fig. 3 - reverse light current vs. irradiance fig. 4 - diode capacitance vs. reverse voltage basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 1.7 v breakdown voltage i r = 100 a, e = 0 v (br) 32 v reverse dark current v r = 10 v, e = 0 i ro < 1 10 na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 1.1 pf v r = 3 v, f = 1 mhz, e = 0 c d 0.5 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo -2.7 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 1.13 a temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 0.81.131.8 a angle of half sensitivity ? 75 deg wavelength of peak sensitivity p 950 nm range of spectral bandwidth 0.5 780 to 1050 nm rise time v r = 10 v, r l = 1 k , = 820 nm t r 1000 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 1000 ns 1 10 100 1000 0 reverse dark current (na) t amb - ambient temperature (c) 120 80 40 100 60 20 0.6 0.8 1.0 1.2 1.4 i ra, rel - relative reverse light current t amb - ambient temperature (c) 94 8416 v r = 5 v = 950 nm 0 100 80 60 40 20 0.1 1 10 100 0.01 i ra - reverse light current (a) e e - irradiance (mw/cm 2 ) v r = 5 v = 950 nm 10 1 0.1 0.0 2.5 - 10 c j - junction capacitance (pf) v f - forward voltage (v) 1 - 1 - 5 0 - 4 - 6 2.0 1.5 1.0 0.5 - 8 - 7 - 9 - 3 - 2
VEMD11940FX01 www.vishay.com vishay semiconductors rev. 1.0, 09-jan-14 3 document number: 84194 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - relative spectral sensitivity vs. wavelength fig. 6 - relative radiant sensitivity vs. angular displacement - horizontal fig. 7 - relative radiant sensitivity vs. angular displacement - vertical reflow solder profile fig. 8 - lead (pb)-free reflow solder profil e acc. j-std-020d drypack devices are packed in moistu re barrier bags (mbb) to prevent the products from mo isture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 168 h conditions: t amb < 30 c, rh < 60 % moisture sensitivity level 3, acc. to j-std-020. drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry us ing recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 600 700 800 900 1000 1100 s ( ) rel - relative s pectral s en s itivity - wavelength (nm) 0.4 0.2 0 i e, rel - relative radiant sensitivity 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement horizontal 0.4 0.2 0 i e, rel - relative radiant sensitivity 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement vertical
VEMD11940FX01 www.vishay.com vishay semiconductors rev. 1.0, 09-jan-14 4 document number: 84194 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters c a r e c o m m e n d e d f o o t p r i n t 0.6 3 1 0.2 2 0.2 2 1 . 5 cathode anode not indicated tolerances 0.1 mm technical drawings according to din specification. drawing- no: 6.550-5327.01-4 issue: prel. 26.11.2013 optical center 0 . 4 0 .4 polarity identification 5 0.2 2 0 . 9 1.5 0.9
VEMD11940FX01 www.vishay.com vishay semiconductors rev. 1.0, 09-jan-14 5 document number: 84194 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 taping and reel dimensions in millimeters a h - h (5 : 1) a h h ? 178 ? 13 1 . 5 8 . 4 1 4 . 4 unreel direction label posted here device reel-design is representative for different types cover tape 400 mm min. drawing refers to following types: vsmb11940 vemd11940f drawing no. 9.800-5126.01-4; issue: prel. 23.05.2013 8 0 . 9 0 .2 3 4 2 4 1 . 7 5 3 . 5 ? 1 ? 1.55 empty leader 100 mm min. empty trailer 160 mm min. cathode
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